Gate-Source Breakdown Voltage
: +/- 20 V
Mounting Style
: SMD/SMT
Packaging
: Reel
Maximum Operating Temperature
: + 150 C
Transistor Polarity
: N and P-Channel
Configuration
: Dual Dual Drain
Package / Case
: SOIC-8 Narrow
Drain-Source Breakdown Voltage
: +/- 30 V
Resistance Drain-Source RDS (on)
: 0.035 Ohms
Continuous Drain Current
: 5.3 A, - 4 A
Features: `N-Channel 5.3A, 30V, RDS(ON)=0.035 @ VGS=10V. P-Channel -4.0A, -30V, RDS(ON)=0.065 @ VGS=-10V.
`High density cell design or extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.
`Dual (N & P-Channel) MOSFET in surface mount package.Pinout
Specifications
|
Symbol |
Parameter |
N-Channel |
P-Channel |
Units |
|
VDSS
VGSS |
Drain-Source Voltage
Gate-Source Voltage |
30
20
5.3
20 |
-30
-20
-4
-15 |
V
V
A
W
°C |
|
ID |
Drain Current Continuous Pulsed |
(Note 1a) |
|
PD |
Power Dissipation for Dual Operation |
2
1.6
1
0.9
-55 to 150 |
| Power Dissipation for Single Operation |
(Note 1a)
(Note 1b)
(Note 1c) |
| TJ,TSTG |
Operating and Storage Junction Temperature Range |
THERMAL CHARACTERISTICS
RJA
RJC |
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case |
(Note 1a)
(Note 1) |
78
40 |
°C/W
°C/W |
DescriptionThese dual N- and P-Channel enhancement mode power field effect transistors NDS8958 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDS8958 is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Parameters: | Technical/Catalog Information | NDS8958 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N and P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 5.3A, 4A |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 5.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 720pF @ 15V |
| Power - Max | 900mW |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 30nC @ 10V |
| Package / Case | SO-8 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDS8958
NDS8958
NDS8958CT ND
NDS8958CTND
NDS8958CT
|
NDS8958 Data Sheet
