NDT014

MOSFET N-Channel FET Enhancement Mode

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NDT014 Picture
SeekIC No. : 00146307 Detail

NDT014: MOSFET N-Channel FET Enhancement Mode

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US $ .17~.27 / Piece | Get Latest Price
Part Number:
NDT014
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Processing time
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Upload time: 2024/11/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : +/- 2.7 A
Resistance Drain-Source RDS (on) : 0.2 Ohms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Package / Case : SOT-223
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 0.2 Ohms
Continuous Drain Current : +/- 2.7 A


Features:

`2.7A, 60V. RDS(ON) = 0.2 @ VGS = 10V.
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.



Pinout

  Connection Diagram   Connection Diagram


Specifications

Symbol Parameter NDT014 Units
VDSS Drain-Source Voltage 60 V
VGSS Gate-Source Voltage - Continuous ±20 V
ID Drain Current - Continuous (Note 1a)
- Pulsed
±2.7 A
±10
PD Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c)
3 W
1.3
1.1
TJ,TSTG Operating and Storage Temperature Range -65 to 150
THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 /W
RJC Thermal Resistance, Junction-to-Case (Note 1) 12 /W
* Order option J23Z for cropped center drain lead.



Description

Power SOT N-Channel enhancement mode power field effect transistors NDT014 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDT014 is particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.




Parameters:

Technical/Catalog InformationNDT014
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C2.7A
Rds On (Max) @ Id, Vgs200 mOhm @ 1.6A, 10V
Input Capacitance (Ciss) @ Vds 155pF @ 25V
Power - Max1.1W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs11nC @ 10V
Package / CaseSOT-223-4
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NDT014
NDT014
NDT014CT ND
NDT014CTND
NDT014CT



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