Position: Home  > All Categories> Integrated Circuits (ICs) > NDS8926

NDS8926

Features: `5.5 A, 20 V. RDS(ON) = 0.035 @ VGS = 4.5 V RDS(ON) = 0.045 @ VGS = 2.7 V.`High density cell design for extremely low RDS(ON).`High power and current handling capability in a widely used surface mount package.`Dual MOSFET in surface mount package.PinoutSpecifications Symbol P...

product image

NDS8926 Picture
See larger image
SeekIC No. : 004433295 Detail

NDS8926: Features: `5.5 A, 20 V. RDS(ON) = 0.035 @ VGS = 4.5 V RDS(ON) = 0.045 @ VGS = 2.7 V.`High density cell design for extremely low RDS(ON).`High power and current handling capability in a widely used ...

NDS8926 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
NDS8926
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/1/9

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`5.5 A, 20 V. RDS(ON) = 0.035 @ VGS = 4.5 V RDS(ON) = 0.045 @ VGS = 2.7 V.
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.
`Dual MOSFET in surface mount package.


Pinout

Connection Diagram


Specifications

Symbol
Parameter
NDS8926
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
20
8
5.5
20
2
1.6
1
0.9
-55 to 150
V
V
A

W


°C
ID
 Drain Current - Continuous
- Pulsed		 (Note 1a)
PD
 Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
<TD w
RJA
RJC		 Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case		 (Note 1a)
(Note 1)



Description

These N-Channel enhancement mode power field effect transistors NDS8926 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. TheNDS8926 is particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Cable Assemblies
CS1W-CN114
XW2Z-500T
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Switches
US32DMRJ
HBGQ22P-11ET
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
View more