NDS8433

Packaging :
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : - 8 V
Continuous Drain Current : 5.2 A
Resistance Drain-Source RDS (on) : 0.055 Ohms


Features:

`-5.2A, -20V. R<sub>DS(ON)</sub> = 0.055 @ V<sub>GS</sub> = -4.5V
                       R<sub>DS(ON)</sub> = 0.075 @ V<sub>GS</sub> = -2.7V.
`High density cell design for extremely low R_DS(ON).
`High power and current handling capability in a widely used surface mount package.


Pinout




Specifications

Symbol	Parameter	NDS8433	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	-8	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	-5.2	A
		-20
PD	Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.2
		1
TJ,TSTG	Operating and Storage Temperature Range	-55 to 150
THERMAL CHARACTERISTICS
RJA	Thermal Resistance, Junction-to-Ambient (Note 1a)	50	/W
RJC	Thermal Resistance, Junction-to-Case (Note 1)	20	/W

Description

These P-Channel enhancement mode power field effect transistors NDS8433 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDS8433 is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.