NDS8435A

MOSFET Single P-Ch FET Enhancement Mode

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SeekIC No. : 00163939 Detail

NDS8435A: MOSFET Single P-Ch FET Enhancement Mode

floor Price/Ceiling Price

Part Number:
NDS8435A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : - 7.9 A
Resistance Drain-Source RDS (on) : 0.02 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : - 30 V
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.02 Ohms
Continuous Drain Current : - 7.9 A


Features:

`-7.9 A, -30 V. RDS(ON) = 0.023  @ VGS = -10 V
                        RDS(ON) = 0.035  @ VGS = -4.5V.
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.



Pinout

  Connection Diagram


Specifications

Symbol Parameter NDS8435A Units
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current - Continuous (Note 1a)
- Pulsed
-7.9 A
-25
PD
Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c)
2.5 W
1.2
1
TJ,TSTG Operating and Storage Temperature Range -55 to 150
THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 /W
RJC Thermal Resistance, Junction-to-Case (Note 1) 20 /W



Description

SO-8 P-Channel enhancement mode power field effect transistors NDS8435A are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDS8435A is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




Parameters:

Technical/Catalog InformationNDS8435A
VendorFairchild Optoelectronics Group
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C7.9A
Rds On (Max) @ Id, Vgs23 mOhm @ 7.9A, 10V
Input Capacitance (Ciss) @ Vds 1800pF @ 15V
Power - Max1W
PackagingTube
Gate Charge (Qg) @ Vgs67nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDS8435A
NDS8435A



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