NDT3055

MOSFET SOT-223 N-CH ENHANCE

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SeekIC No. : 00147243 Detail

NDT3055: MOSFET SOT-223 N-CH ENHANCE

floor Price/Ceiling Price

US $ .25~.37 / Piece | Get Latest Price
Part Number:
NDT3055
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.37
  • $.33
  • $.28
  • $.25
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 0.1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 4 A
Package / Case : SOT-223
Resistance Drain-Source RDS (on) : 0.1 Ohms


Features:

`4 A, 60 V. RDS(ON) = 0.100  @ VGS = 10 V.
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.



Pinout

  Connection Diagram  Connection Diagram


Specifications

Symbol Parameter NDT3055 Units
VDSS Drain-Source Voltage 60 V
VGSS Gate-Source Voltage - Continuous ±20 V
ID Maximum Drain Current - Continuous (Note 1a)
- Pulsed
4 A
25
PD Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c)
3 W
1.3
1.1
TJ,TSTG Operating and Storage Temperature Range -65 to 150
THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 /W
RJC Thermal Resistance, Junction-to-Case (Note 1) 12 /W
* Order option J23Z for cropped center drain lead.



Description

These N-Channel enhancement mode power field effect transistors NDT3055 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDT3055 is particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.




Parameters:

Technical/Catalog InformationNDT3055
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C4A
Rds On (Max) @ Id, Vgs100 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 250pF @ 30V
Power - Max1.1W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs15nC @ 10V
Package / CaseSOT-223-4
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDT3055
NDT3055
NDT3055DKR ND
NDT3055DKRND
NDT3055DKR



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