MOSFET N-Channel FET Enhancement Mode
NDT3055_J23Z: MOSFET N-Channel FET Enhancement Mode
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 4 A | ||
Resistance Drain-Source RDS (on) : | 0.1 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-223 | Packaging : | Reel |