Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Mounting Style
: SMD/SMT
Packaging
: Reel
Maximum Operating Temperature
: + 150 C
Drain-Source Breakdown Voltage
: 60 V
Continuous Drain Current
: 4 A
Package / Case
: SOT-223
Resistance Drain-Source RDS (on)
: 0.07 Ohms
Features: `4 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V, RDS(ON) = 0.120 @ VGS = 4.5 V.
`Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2V.
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.Pinout
Specifications
| Symbol |
Parameter |
NDT3055L |
Units |
| VDSS |
Drain-Source Voltage |
60 |
V |
| VGSS |
Gate-Source Voltage - Continuous |
±20 |
V |
| ID |
Maximum Drain Current - Continuous (Note 1a)
- Pulsed |
4 |
A |
| 25 |
| PD |
Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c) |
3 |
W |
| 1.3 |
| 1.1 |
| TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 150 |
|
| THERMAL CHARACTERISTICS |
| RJA |
Thermal Resistance, Junction-to-Ambient (Note 1a) |
42 |
/W |
| RJC |
Thermal Resistance, Junction-to-Case (Note 1) |
12 |
/W |
| * Order option J23Z for cropped center drain lead. |
DescriptionThese logic level N-Channel enhancement mode power field effect transistors NDT3055L are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. NDT3055L is particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Parameters: | Technical/Catalog Information | NDT3055L |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 4A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 4A, 10V |
| Input Capacitance (Ciss) @ Vds | 345pF @ 25V |
| Power - Max | 1.1W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V |
| Package / Case | SOT-223-4 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDT3055L
NDT3055L
NDT3055LCT ND
NDT3055LCTND
NDT3055LCT
|
NDT3055L Data Sheet
