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NE23300

Features: • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz• HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz• GATE LENGTH: 0.3 m• GATE WIDTH: 280 mSpecifications SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 4.0 VGS Gate to Source Voltage...

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NE23300: Features: • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz• HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz• GATE LENGTH: 0.3 m• GATE WIDTH: 280 mSpecifications SYMBOL...

NE23300 Data Sheet

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Part Number:
NE23300
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• VERY LOW NOISE FIGURE:
  0.75 dB typical at 12 GHz
• HIGH ASSOCIATED GAIN:
  10.5 dB Typical at 12 GHz
• GATE LENGTH: 0.3 m
• GATE WIDTH: 280 m


Specifications

SYMBOLS PARAMETERS UNITS RATINGS
VDS Drain to Source Voltage V 4.0
VGS Gate to Source Voltage V -3.0
IDS Drain Current mA IDSS
TCH Channel Temperature 175
TSTG Storage Temperatur -65 to +175
PT Total Power Dissipation mW 200

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.


Description

The NE23300 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. NE23300's excellent low noise figure and high associated gain make it suitable for space applications.

NEC's NE23300 stringent quality assurance and test procedures assure the highest reliability and performance.




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