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NE23383B

Features: • SUPER LOW NOISE FIGURE: NF = 0.35 dB TYP at f = 4 GHz• HIGH ASSOCIATED GAIN: GA = 15.0 dB TYP at f = 4 GHz• GATE LENGTH = LG = 0.3 m• GATE WIDTH = WG = 280 m• HERMETIC SEALED CERAMIC PACKAGE• HIGH RELIABILITYApplication• BEST SUITED FOR LOW NOI...

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SeekIC No. : 004433313 Detail

NE23383B: Features: • SUPER LOW NOISE FIGURE: NF = 0.35 dB TYP at f = 4 GHz• HIGH ASSOCIATED GAIN: GA = 15.0 dB TYP at f = 4 GHz• GATE LENGTH = LG = 0.3 m• GATE WIDTH = WG = 280 m̶...

NE23383B Data Sheet

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Part Number:
NE23383B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• SUPER LOW NOISE FIGURE:
  NF = 0.35 dB TYP at f = 4 GHz
• HIGH ASSOCIATED GAIN:
  GA = 15.0 dB TYP at f = 4 GHz
• GATE LENGTH = LG = 0.3 m
• GATE WIDTH = WG = 280 m
• HERMETIC SEALED CERAMIC PACKAGE
• HIGH RELIABILITY




Application

• BEST SUITED FOR LOW NOISE AMPS STAGE AT C AND X BAND


Specifications

SYMBOLS PARAMETERS UNITS RATINGS
VDS Drain to Source Voltage V 4.0
VGS Gate to Source Voltage V 4.0
ID Drain Current mA IDSS
PTOT Total Power Dissipation mW 165
TCH Channel Temperature 175
TSTG Storage Temperature -65 to +175
Note:
1. Operation in excess of any one of these conditions may result in permanent damage.


Description

The NE23383B is a heterojunction FET that utilizes the heterojunction to create high mobility electrons. The device features mushroom shaped gate for decreased gate resistance and improved power handling capabilities. The mushroom gate structure also results in low noise figure and high associated gain. The NE23383B is housed in a rugged hermetically sealed metal ceramic stripline package selected for industrial and space applications.

 NEC's NE23383B stringent quality assurance and test procedures assure the highest reliability and performance.




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