Gate-Source Breakdown Voltage
: +/- 20 V
Maximum Operating Temperature
: + 175 C
Mounting Style
: SMD/SMT
Packaging
: Reel
Transistor Polarity
: P-Channel
Drain-Source Breakdown Voltage
: - 20 V
Configuration
: Dual Dual Drain
Package / Case
: SOIC-8 Narrow
Continuous Drain Current
: - 3.5 A
Resistance Drain-Source RDS (on)
: 46 m Ohms
Features: `-3.5A, -20V. RDS(ON) = 0.1 @ VGS = 10V
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.
`Dual MOSFET in surface mount package.Pinout
Specifications
| Symbol |
Parameter |
NDS8947 |
Units |
| VDSS |
Drain-Source Voltage |
-30 |
V |
| VGSS |
Gate-Source Voltage |
-20 |
V |
| ID |
Drain Current - Continuous TA = 25 (Note 1a)
- Continuous TA = 70 (Note 1a)
- Pulsed TA = 25 |
± 3.5 |
A |
| ± 2.5 |
| ± 10 |
| PD |
Power Dissipation for Dual Operation |
2 |
|
|
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c) |
1.6 |
W |
| 1 |
| 0.9 |
| TJ,TSTG |
Operating and Storage Temperature Range |
-55 to 150 |
|
| THERMAL CHARACTERISTICS |
| RJA |
Thermal Resistance, Junction-to-Ambient (Note 1a) |
78 |
/W |
| RJC |
Thermal Resistance, Junction-to-Case (Note 1) |
40 |
/W |
DescriptionThese P-Channel enhancement mode power field effect transistors NDS9947 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDS9947 is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Parameters: | Technical/Catalog Information | NDS9947 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 3.5A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 3.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 542pF @ 10V |
| Power - Max | 900mW |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 13nC @ 10V |
| Package / Case | SO-8 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDS9947
NDS9947
NDS9947CT ND
NDS9947CTND
NDS9947CT
|
NDS9947 Data Sheet
