NDS8434

MOSFET Single P-Ch FET Enhancement Mode

product image

NDS8434 Picture
SeekIC No. : 00163816 Detail

NDS8434: MOSFET Single P-Ch FET Enhancement Mode

floor Price/Ceiling Price

Part Number:
NDS8434
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/25

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : - 6.5 A
Resistance Drain-Source RDS (on) : 0.035 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : SOIC-8 Narrow
Continuous Drain Current : - 6.5 A
Resistance Drain-Source RDS (on) : 0.035 Ohms


Features:

`-6.5A, -20V. RDS(ON) = 0.035 @ VGS = -4.5V
                        RDS(ON) = 0.05 @ VGS = -2.7V.
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.



Pinout

  Connection Diagram


Specifications

Symbol Parameter NDS8434 Units
VDSS Drain-Source Voltage -20 V
VGSS Gate-Source Voltage -8 V
ID Drain Current - Continuous (Note 1a)
- Pulsed
-6.5 A
-20
PD
Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c)
2.5 W
1.2
1
TJ,TSTG Operating and Storage Temperature Range -55 to 150
THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 /W
RJC Thermal Resistance, Junction-to-Case (Note 1) 20 /W



Description

These P-Channel enhancement mode power field effect transistors NDS8434 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDS8434 is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




Parameters:

Technical/Catalog InformationNDS8434
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C6.5A
Rds On (Max) @ Id, Vgs35 mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) @ Vds 2330pF @ 10V
Power - Max1W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs80nC @ 4.5V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDS8434
NDS8434
NDS8434DKR ND
NDS8434DKRND
NDS8434DKR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Line Protection, Backups
Potentiometers, Variable Resistors
Fans, Thermal Management
Integrated Circuits (ICs)
Soldering, Desoldering, Rework Products
Power Supplies - External/Internal (Off-Board)
View more