NDS9410A

MOSFET Single N-Ch FET Enhancement Mode

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SeekIC No. : 00160638 Detail

NDS9410A: MOSFET Single N-Ch FET Enhancement Mode

floor Price/Ceiling Price

Part Number:
NDS9410A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/9

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 7.3 A
Resistance Drain-Source RDS (on) : 0.028 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 7.3 A
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.028 Ohms


Features:

• 7.3 A, 30 V.                 RDS(ON) = 28 m @ VGS = 10 V
                                      RDS(ON) = 42 m @ VGS = 4.5 V
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability in a widely used surface mount package.



Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current Continuous          (Note 1a)
                      Pulsed
7.3 A
            20
PD Power Dissipation for Single Operation (Note 1a)
                                                              (Note 1b)
                                                              (Note 1c)
2.5 W
           1.2
           1.0
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150



Description

This N-Channel Logic Level MOSFET NDS9410A is producedusing Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

NDS9410A is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss and resistance totransients are needed.


Parameters:

Technical/Catalog InformationNDS9410A
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C7.3A
Rds On (Max) @ Id, Vgs28 mOhm @ 7.3A, 10V
Input Capacitance (Ciss) @ Vds 830pF @ 15V
Power - Max1W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs22nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDS9410A
NDS9410A
NDS9410ADKR ND
NDS9410ADKRND
NDS9410ADKR



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