NDS9430A

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : - 30 V
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 42 mOhms
Continuous Drain Current : - 5.3 A


Features:

`-5.3A, -20V. R<sub>DS(ON)</sub> = 0.05 @ V<sub>GS</sub> = -10V R<sub>DS(ON)</sub> = 0.065 @ V<sub>GS</sub> = -6V R<sub>DS(ON)</sub> = 0.09 @ V<sub>GS</sub> = -4.5V.
`High density cell design for extremely low R_DS(ON).
`High power and current handling capability in a widely used surface mount package.


Pinout




Specifications

Symbol	Parameter		NDS9430A	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		-20 ± 20 ± 5.3 ± 20 2.5 1.2 1 -55 to 150	V V A W °C
ID	Drain Current - Continuous - Pulsed	(Note 1a)
PD	Maximum Power Dissipation	(Note 1a) (Note 1b) (Note 1c)
TJ,TSTG	Operating and Storage Temperature Range

THERMAL CHARACTERISTICS

RJA RJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

50 25

°C/W °C/W

Description

These P-Channel enhancement mode power field effect transistors NDS9430A are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDS9430A is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Parameters:

Technical/Catalog Information	NDS9430A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	5.3A
Rds On (Max) @ Id, Vgs	50 mOhm @ 5.3A, 10V
Input Capacitance (Ciss) @ Vds	950pF @ 15V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	50nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDS9430A NDS9430A