NDS8852H

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Resistance Drain-Source RDS (on) : 0.08 Ohms
Package / Case : SOIC-8 Narrow
Configuration : Dual Common Quad Drain
Continuous Drain Current : 4.3 A, - 3.4 A


Features:

`N-Channel 4.3A, 30V, R<sub>DS(ON)</sub>=0.08 @ V<sub>GS</sub>=10V. P-Channel -3.4A, -30V, R<sub>DS(ON)</sub>=0.13 @ V<sub>GS</sub>=-10V.
`High density cell design or extremely low R_DS(ON).
`High power and current handling capability in a widely used surface mount package.
`Matched pair for equal input capacitance and power capability


Specifications

Symbol	Parameter		N-Channel	P-Channel	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		30 20 4.3 15	-30 -20 -3.4 -10	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a & 2)
PD	Maximum Power Dissipation (Single Device)	(Note 1a) (Note 1b) (Note 1c)	2.5 1.2 1 -55 to 150
TJ,TSTG	Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS
</TB

RJA RJC

Thermal Resistance, Junction-to-Ambient (Single Device) Thermal Resistance, Junction-to-Case (Single Device)

(Note 1a) (Note 1)

50 25

°C/W °C/W

Description

These Complementary MOSFET NDS8852H half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDS8852H is particularly suited for low voltage half bridge applications or CMOS applications when both gates are connected together.