MOSFET Dual P-Ch FET Enhancement Mode
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 2.8 A | ||
Resistance Drain-Source RDS (on) : | 0.105 Ohms | Configuration : | Dual Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |
Symbol | Parameter | NDS9933A | Units |
VDSS | Drain-Source Voltage | -20 | V |
VGSS | Gate-Source Voltage | ±8 | V |
ID | Drain Current - Continuous (Note 1a) - Pulsed |
-2.8 | A |
-10 | |||
PD | Power Dissipation for Dual Operation | 2 | W |
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
1.6 | ||
1 | |||
0.9 | |||
TJ, Tstg | Operating and Storage Junction Temperature Range | -55 to +150 |
This P-Channel enhancement mode power field effect transistor NDS9933A is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
NDS9933A is particularly suited for low voltage apllications such as DC motor control and DC/ DC conversion where fast switching,low in-line power loss, and resistance to transients are needed.
Technical/Catalog Information | NDS9933A |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 P-Channel (Dual) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 2.8A |
Rds On (Max) @ Id, Vgs | 140 mOhm @ 2.8A, 4.5V |
Input Capacitance (Ciss) @ Vds | 405pF @ 10V |
Power - Max | 900mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 8.5nC @ 4.5V |
Package / Case | SO-8 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NDS9933A NDS9933A |