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NE25139

Features: • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER• LOW CRSS: 0.02 pF (TYP)• HIGH GPS: 20 dB (TYP) AT 900 MHz• LOW NF: 1.1 dB TYP AT 900 MHz• LG1 = 1.0 m, LG2 = 1.5 m, WG = 400 m• ION IMPLANTATION• AVAILABLE IN TAPE & REEL OR BULKSpecifications ...

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NE25139: Features: • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER• LOW CRSS: 0.02 pF (TYP)• HIGH GPS: 20 dB (TYP) AT 900 MHz• LOW NF: 1.1 dB TYP AT 900 MHz• LG1 = 1.0 m, LG2 = ...

NE25139 Data Sheet

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Part Number:
NE25139
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER
• LOW CRSS: 0.02 pF (TYP)
• HIGH GPS: 20 dB (TYP) AT 900 MHz
• LOW NF: 1.1 dB TYP AT 900 MHz
• LG1 = 1.0 m, LG2 = 1.5 m, WG = 400 m
• ION IMPLANTATION
• AVAILABLE IN TAPE & REEL OR BULK


Specifications

SYMBOLS PARAMETERS UNITS RATINGS
VDS Drain to Source Voltage V 13
VG1S Gate 1 to Source Voltage V -4.5
VG2S Gate 2 to Source Voltage V -4.5
ID Drain Current mA IDSS
PT Total Power Dissipation mW 200
TCH Channel Temperature 125
TSTG Storage Temperature -55 to +125
Note:
1. Operation in excess of anyone of these parameters may result in permanent damage.


Description

The NE251 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs. NE251 is available in a mini-mold (surface mount) package.




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