NDS9945

MOSFET Dl N-Ch Enhancement

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SeekIC No. : 00159556 Detail

NDS9945: MOSFET Dl N-Ch Enhancement

floor Price/Ceiling Price

Part Number:
NDS9945
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/9

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.5 A
Resistance Drain-Source RDS (on) : 0.076 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 3.5 A
Resistance Drain-Source RDS (on) : 0.076 Ohms


Features:

·3.5 A, 60 V. RDS(ON) = 0.100 W @ VGS = 10 V,  RDS(ON) = 0.200 W @ VGS = 4.5 V.
·High density cell design for extremely low RDS(ON).
·High power and current handling capability in a widely used surface mount package.
·Dual MOSFET in surface mount package.



Pinout

  Connection Diagram


Specifications

Symbol Parameter NDS9945 Units
VDSS Drain-Source Voltage 60 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current - Continuous (Note 1a)
- Pulsed
3.5 A
  10
PD Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
TJ,TSTG Operating and Storage Temperature Range 0.9
THERMAL CHARACTERISTICS      
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
© 1998 Fairchild Semiconductor Corporation


Description

SO-8 N-Channel enhancement mode power field effect transistors NDS9945 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. NDS9945 is particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




Parameters:

Technical/Catalog InformationNDS9945
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C3.5A
Rds On (Max) @ Id, Vgs100 mOhm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds 345pF @ 25V
Power - Max2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / CaseSO-8
FET Feature*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDS9945
NDS9945
NDS9945TR ND
NDS9945TRND
NDS9945TR



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