NDS9925A

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 0.06 Ohms


Features:

`4.5 A, 20 V. R<sub>DS(ON)</sub> = 0.060 @ V<sub>GS</sub> = 4.5 V R<sub>DS(ON)</sub> = 0.075 @ V<sub>GS</sub> = 2.7 V.
`High density cell design for extremely low R_DS(ON).
`High power and current handling capability in a widely used surface mount package.
`Dual MOSFET in surface mount package.


Pinout




Specifications

Symbol	Parameter		NDS9925A	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		20 ±8 4.5 15 2 1.6 1 0.9 -55 to 150	V V A W °C
ID	Drain Current - Continuous - Pulsed	(Note 1a)
PD	Power Dissipation for Dual Operation
	Power Dissipation for Single Operation	(Note 1a) (Note 1b) (Note 1c)
TJ,TSTG	Operating and Storage Temperature Range

THERMAL CHARACTERISTICS
</TABLE

RJA RJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

78 40

°C/W °C/W

Description

SO-8 N-Channel enhancement mode power field effect transistors NDS9925A are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDS9925A is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Parameters:

Technical/Catalog Information	NDS9925A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	4.5A
Rds On (Max) @ Id, Vgs	60 mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) @ Vds	-
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	-
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDS9925A NDS9925A