NDS8934

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Continuous Drain Current : - 3.8 A
Resistance Drain-Source RDS (on) : 0.07 Ohms


Features:

`-3.8A, -20V. R<sub>DS(ON)</sub> = 0.07 @ V<sub>GS</sub> = -4.5V
                       R<sub>DS(ON)</sub> = 0.1 @ V<sub>GS</sub> = -2.7V.
`High density cell design for extremely low R_DS(ON).
`High power and current handling capability in a widely used surface mount package.
`Dual MOSFET in surface mount package.


Pinout




Specifications

Symbol	Parameter	NDS9955	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	-8	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	-3.8	A
		-15
PD	Power Dissipation for Dual Operation	2
	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	1.6	W
		1
		0.9
TJ,TSTG	Operating and Storage Temperature Range	-55 to 150
THERMAL CHARACTERISTICS
RJA	Thermal Resistance, Junction-to-Ambient (Note 1a)	78	/W
RJC	Thermal Resistance, Junction-to-Case (Note 1)	40	/W

Description

These P-Channel enhancement mode power field effect transistors NDS8934 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDS8934 is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Parameters:

Technical/Catalog Information	NDS8934
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	3.8A
Rds On (Max) @ Id, Vgs	70 mOhm @ 3.8A, 4.5V
Input Capacitance (Ciss) @ Vds	1120pF @ 10V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	30nC @ 4.5V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDS8934 NDS8934