MOSFET SOT-223 P-CH ENHANCE
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 2.5 A | ||
Resistance Drain-Source RDS (on) : | 95 m Ohms | Configuration : | Single Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-223 | Packaging : | Reel |
Symbol | Parameter | NDT2955 | Units |
VDSS | Drain-Source Voltage | -60 | V |
VGSS | Gate-Source Voltage - Continuous | ±20 | V |
ID | Drain Current - Continuous (Note 1a) - Pulsed |
-2.5 | A |
-15 | |||
PD | Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) |
3 | W |
1.3 | |||
1.1 | |||
TJ,TSTG | Operating and Storage Temperature Range | -65 to 150 | |
THERMAL CHARACTERISTICS | |||
RJA | Thermal Resistance, Junction-to-Ambient (Note 1a) | 42 | /W |
RJC | Thermal Resistance, Junction-to-Case (Note 1) | 12 | /W |
* Order option J23Z for cropped center drain lead. |
Power SOT P-Channel enhancement mode power field effect transistors NDT2955 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDT2955 is particularly suited for low voltage applications such as notebook computer power management and DC motor control.
Technical/Catalog Information | NDT2955 |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 2.5A |
Rds On (Max) @ Id, Vgs | 300 mOhm @ 2.5A, 10V |
Input Capacitance (Ciss) @ Vds | 601pF @ 30V |
Power - Max | 1.1W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 15nC @ 10V |
Package / Case | SOT-223-4 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NDT2955 NDT2955 NDT2955CT ND NDT2955CTND NDT2955CT |