NDT2955

MOSFET SOT-223 P-CH ENHANCE

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SeekIC No. : 00147451 Detail

NDT2955: MOSFET SOT-223 P-CH ENHANCE

floor Price/Ceiling Price

US $ .2~.38 / Piece | Get Latest Price
Part Number:
NDT2955
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.38
  • $.31
  • $.22
  • $.2
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2.5 A
Resistance Drain-Source RDS (on) : 95 m Ohms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 60 V
Package / Case : SOT-223
Continuous Drain Current : 2.5 A
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 95 m Ohms


Features:

`-2.5A, -60V. RDS(ON) = 0.3 @ VGS = -10V.
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.



Pinout

  Connection Diagram   Connection Diagram


Specifications

Symbol Parameter NDT2955 Units
VDSS Drain-Source Voltage -60 V
VGSS Gate-Source Voltage - Continuous ±20 V
ID Drain Current - Continuous (Note 1a)
- Pulsed
-2.5 A
-15
PD Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c)
3 W
1.3
1.1
TJ,TSTG Operating and Storage Temperature Range -65 to 150
THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 /W
RJC Thermal Resistance, Junction-to-Case (Note 1) 12 /W
* Order option J23Z for cropped center drain lead.



Description

Power SOT P-Channel enhancement mode power field effect transistors NDT2955 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDT2955 is particularly suited for low voltage applications such as notebook computer power management and DC motor control.




Parameters:

Technical/Catalog InformationNDT2955
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C2.5A
Rds On (Max) @ Id, Vgs300 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds 601pF @ 30V
Power - Max1.1W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs15nC @ 10V
Package / CaseSOT-223-4
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDT2955
NDT2955
NDT2955CT ND
NDT2955CTND
NDT2955CT



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