NDS9435A

MOSFET -30V -5.3A P-CH

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SeekIC No. : 00163895 Detail

NDS9435A: MOSFET -30V -5.3A P-CH

floor Price/Ceiling Price

Part Number:
NDS9435A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/16

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 5.3 A
Resistance Drain-Source RDS (on) : 0.05 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 5.3 A
Drain-Source Breakdown Voltage : - 30 V
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.05 Ohms


Features:

`-5.3A, -30V. RDS(ON) = 0.05 @ VGS = -10V
                        RDS(ON) = 0.07 @ VGS = -6V
                       RDS(ON) = 0.09 @ VGS = -4.5V.
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.



Pinout

  Connection Diagram


Specifications

Symbol Parameter NDS9435A Units
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage ± 20 V
ID Drain Current - Continuous (Note 1a)
- Pulsed
± 5.3 A
± 20
PD
Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c)
2.5 W
1.2
1
TJ,TSTG Operating and Storage Temperature Range -55 to 150
THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 /W
RJC Thermal Resistance, Junction-to-Case (Note 1) 20 /W



Description

These P-Channel enhancement mode power field effect transistors NDS9435A are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDS9435A is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




Parameters:

Technical/Catalog InformationNDS9435A
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C5.3A
Rds On (Max) @ Id, Vgs50 mOhm @ 5.3A, 10V
Input Capacitance (Ciss) @ Vds 528pF @ 15V
Power - Max1W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs14nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDS9435A
NDS9435A
NDS9435ADKR ND
NDS9435ADKRND
NDS9435ADKR



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