NDS8858H

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.035 Ohms
Configuration : Dual Common Quad Drain
Continuous Drain Current : 6.3 A, - 4.8 A


Features:

`N-Channel 6.3A, 30V, R<sub>DS(ON)</sub>=0.035  @ V<sub>GS</sub>=10V. P-Channel -4.8A, -30V, R<sub>DS(ON)</sub>=0.065  @ V<sub>GS</sub>=-10V.
`High density cell design or extremely low R_DS(ON).
`High power and current handling capability in a widely used surface mount package.
`Matched pair for equal input capacitance and power capability


Specifications

Symbol	Parameter		N-Channel	P-Channel	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		30 20 6.3 20	-30 -20 -4.8 20	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a & 2)
PD	Maximum Power Dissipation (Single Device)	(Note 1a) (Note 1b) (Note 1c)	2.5 1.2 1 -55 to 150
TJ,TSTG	Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS
</TBO

RJA RJC

Thermal Resistance, Junction-to-Ambient (Single Device) Thermal Resistance, Junction-to-Case (Single Device)

(Note 1a) (Note 1)

50 25

°C/W °C/W

Description

These Complementary MOSFET NDS8858H half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDS8858H is particularly suited for low voltage half bridge applications or CMOS applications when both gates are connected together.

Parameters:

Technical/Catalog Information	NDS8858H
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	6.3A, 4.8A
Rds On (Max) @ Id, Vgs	35 mOhm @ 4.8A, 10V
Input Capacitance (Ciss) @ Vds	720pF @ 15V
Power - Max	1W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	30nC @ 10V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDS8858H NDS8858H NDS8858HDKR ND NDS8858HDKRND NDS8858HDKR