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NE219

DescriptionThe NE219 is NPN silicon bipolar transistor. It is designed for small signal amplifier and ocillator applications up to 6GHz. The device is available in either chip form or in a variety of packages. Features of the NE219 are:(1)high Fr:8GHz;(2)low noise:1dB at 0.5GHz, 2.2dB at 2GHz;(3)...

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SeekIC No. : 004433310 Detail

NE219: DescriptionThe NE219 is NPN silicon bipolar transistor. It is designed for small signal amplifier and ocillator applications up to 6GHz. The device is available in either chip form or in a variety o...

NE219 Data Sheet

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Part Number:
NE219
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5000

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Description

The NE219 is NPN silicon bipolar transistor. It is designed for small signal amplifier and ocillator applications up to 6GHz. The device is available in either chip form or in a variety of packages.

Features of the NE219 are:(1)high Fr:8GHz;(2)low noise:1dB at 0.5GHz, 2.2dB at 2GHz;(3)high collector current:80mA;(4)high oscillator power output:100mW at 6GHz;(5)excellent general purpose transistor.

The absolute maximum ratings of the NE219 can be summarized as:(1)collector to base voltage:20V;(2)collector to emitter voltage:10V;(3)emitter to base voltage:1.5V;(4)collector current:80mA;(5)junction temperature:200;(6)storage temperature:-65 to +200.

If you want to know more information such as the electrical characteristics about the NE219, please download the datasheet in www.seekic.com or www.chinaicmart.com .




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