NDS9955

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : 50 V
Resistance Drain-Source RDS (on) : 0.13 Ohms
Continuous Drain Current : 3 A


Features:

`3.0 A, 50 V. R<sub>DS(ON)</sub> = 0.130 @ V<sub>GS</sub> = 10 V, R<sub>DS(ON)</sub> = 0.200 W @ V<sub>GS</sub> = 4.5 V.
`High density cell design for extremely low R_DS(ON).
`High power and current handling capability in a widely used surface mount package.
`Dual MOSFET in surface mount package.


Pinout




Specifications

Symbol	Parameter	NDS9955	Units
VDSS	Drain-Source Voltage	50	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	3	A
		10
PD	Power Dissipation for Dual Operation	2
	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	1.6	W
		1
		0.9
TJ,TSTG	Operating and Storage Temperature Range	-55 to 150
THERMAL CHARACTERISTICS
RJA	Thermal Resistance, Junction-to-Ambient (Note 1a)	78	/W
RJC	Thermal Resistance, Junction-to-Case (Note 1)	40	/W

Description

SO-8 N-Channel enhancement mode power field effect transistors NDS9955 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. NDS9955 is particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.