Packaging
:
Configuration
: Single
Mounting Style
: SMD/SMT
Transistor Polarity
: P-Channel
Maximum Operating Temperature
: + 150 C
Drain-Source Breakdown Voltage
: 20 V
Gate-Source Breakdown Voltage
: +/- 12 V
Continuous Drain Current
: 1.1 A
Resistance Drain-Source RDS (on)
: 210 mOhms
Package / Case
: SuperSOT-3
Features: `-1.1 A, -20V. RDS(ON) = 0.3 @ VGS = -4.5V.
`Proprietary package design using copper lead frame for superior thermal and electrical capabilities.
`High density cell design for extremely low RDS(ON).
`Exceptional on-resistance and maximum DC current capability.
`Compact industry standard SOT-23 surface mount package.Specifications
|
Symbol |
Parameter |
NDS356P |
Units |
|
VDSS
VGSS |
Drain-Source Voltage
Gate-Source Voltage - Continuous |
-20
± 12
±1.1
±10
0.5
0.46
-55 to 150 |
V
V
A
W
°C |
|
ID |
Maximum Drain Current - Continuous
- Pulsed |
(Note 1a) |
|
PD |
Maximum Power Dissipation |
(Note 1a)
(Note 1b) |
| TJ,TSTG |
Operating and Storage Temperature Range |
THERMAL CHARACTERISTICS
RJA
RJC |
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case |
(Note 1a)
(Note 1) |
250
75 |
°C/W
°C/W</ |
DescriptionThese P-Channel logic level enhancement mode power field effect transistors NDS356P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDS356P is particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Parameters: | Technical/Catalog Information | NDS356P |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 1.1A |
| Rds On (Max) @ Id, Vgs | 210 mOhm @ 1.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 180pF @ 10V |
| Power - Max | 460mW |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 5nC @ 5V |
| Package / Case | SOT-23 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDS356P
NDS356P
NDS356PCT ND
NDS356PCTND
NDS356PCT
|
NDS356P Data Sheet
