Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Mounting Style
: SMD/SMT
Packaging
: Reel
Transistor Polarity
: P-Channel
Package / Case
: SOT-23
Maximum Operating Temperature
: + 150 C
Drain-Source Breakdown Voltage
: - 30 V
Resistance Drain-Source RDS (on)
: 0.2 Ohms
Continuous Drain Current
: 1.1 A
Features: `-1.1 A, -30 V, RDS(ON) = 0.3 @ VGS=-4.5 V RDS(ON) = 0.2 @ VGS=-10 V.
`Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.
`High density cell design for extremely low RDS(ON).
`Exceptional on-resistance and maximum DC current capability.Specifications
|
Symbol |
Parameter |
NDS356AP |
Units |
|
VDSS
VGSS |
Drain-Source Voltage
Gate-Source Voltage - Continuous |
-30
±20
±1.1
±10
0.5
0.46
-55 to 150 |
V
V
A
W
°C |
|
ID |
Maximum Drain Current - Continuous
- Pulsed |
(Note 1a) |
|
PD |
Maximum Power Dissipation |
(Note 1a)
(Note 1b) |
| TJ,TSTG |
Operating and Storage Temperature Range |
THERMAL CHARACTERISTICS
RJA
RJC |
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case |
(Note 1a)
(Note 1) |
250
75 |
°C/W
°C/W</ |
DescriptionSuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors NDS356AP are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDS356AP is particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Parameters: | Technical/Catalog Information | NDS356AP |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 1.1A |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 1.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 280pF @ 10V |
| Power - Max | 460mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 4.4nC @ 5V |
| Package / Case | SSOT-3 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDS356AP
NDS356AP
NDS356APDKR ND
NDS356APDKRND
NDS356APDKR
|
NDS356AP Data Sheet
