NE25339

Features: • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS• LOW CRSS: 0.02 pF (TYP)• HIGH GPS: 20 dB (TYP) AT 900 MHz• LOW NF: 1.1 dB TYP AT 900 MHz• LG1 = 1.0 m, LG2 = 1.5 m, WG = 800 m• ION IMPLANTATION• AVAILABLE IN TAPE & REEL OR BU...

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SeekIC No. : 004433318 Detail

NE25339: Features: • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS• LOW CRSS: 0.02 pF (TYP)• HIGH GPS: 20 dB (TYP) AT 900 MHz• LOW NF: 1.1 dB TYP AT 900 MHz• LG...

floor Price/Ceiling Price

Part Number:
NE25339
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/9

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Product Details

Description



Features:

• SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS
• LOW CRSS: 0.02 pF (TYP)
• HIGH GPS: 20 dB (TYP) AT 900 MHz
• LOW NF: 1.1 dB TYP AT 900 MHz
• LG1 = 1.0 m, LG2 = 1.5 m, WG = 800 m
• ION IMPLANTATION
• AVAILABLE IN TAPE & REEL OR BULK



Specifications

SYMBOLS PARAMETERS UNITS RATINGS
VDS Drain to Source Voltage V 10
VG1S Gate 1 to Source Voltage V -4.5
VG2S Gate 2 to Source Voltage V -4.5
ID Drain Current mA 80
TCH Channel Temperature 125
TSTG Storage Temperature -55 to +125
PT Total Power Dissipation mW 200

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.



Description

The NE253 is an 800 m dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs. NE253 is available in a mini-mold (surface mount) package.




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