Features: • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS• LOW CRSS: 0.02 pF (TYP)• HIGH GPS: 20 dB (TYP) AT 900 MHz• LOW NF: 1.1 dB TYP AT 900 MHz• LG1 = 1.0 m, LG2 = 1.5 m, WG = 800 m• ION IMPLANTATION• AVAILABLE IN TAPE & REEL OR BU...
NE25339: Features: • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS• LOW CRSS: 0.02 pF (TYP)• HIGH GPS: 20 dB (TYP) AT 900 MHz• LOW NF: 1.1 dB TYP AT 900 MHz• LG...
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SYMBOLS | PARAMETERS | UNITS | RATINGS |
VDS | Drain to Source Voltage | V | 10 |
VG1S | Gate 1 to Source Voltage | V | -4.5 |
VG2S | Gate 2 to Source Voltage | V | -4.5 |
ID | Drain Current | mA | 80 |
TCH | Channel Temperature | 125 | |
TSTG | Storage Temperature | -55 to +125 | |
PT | Total Power Dissipation | mW | 200 |
The NE253 is an 800 m dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs. NE253 is available in a mini-mold (surface mount) package.