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Mfg:IR Pack:SOP-8 Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET 2P-CH 12V 9.2A 8-SOICNew P-Channel HEXFET® power MOSFETs IRF7329PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized d...
Mfg:IR Pack:06+ D/C:5000 Vendor:Other Category:Other
Mfg:IR Pack:SO8 D/C:0727+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET 2P-CH 30V 8A 8-SOICNew trench HEXFET® Power MOSFETs IRF7328PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized devi...
Mfg:IR Pack:SOP-8 D/C:04+ Vendor:Other Category:Other
New trench HEXFET® Power MOSFETs IRF7328 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device ...
Vendor:Other Category:Other
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET Power MOSFETs util...
D/C:06+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET 2P-CH 12V 7.8A 8-SOICNew P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized IRF7325PbF...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET 2P-CH 12V 7.8A 8-SOICNew P-Channel HEXFET® power MOSFETs IRF7325 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized devi...
Mfg:IR Pack:SO8 D/C:06+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET 2P-CH 20V 9A 8-SOICNew trench HEXFET® Power MOSFETs IRF7324PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized devi...
Mfg:IR Pack:SO8 D/C:07+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 20V 2.2A 8-SOICThe FETKYtTM family IRF7324D1PbF of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced process...
Vendor:Other Category:Other
The FETKY family IRF7324D1 of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing te...
Vendor:Other Category:Other
New trench HEXFET® Power MOSFETs IRF7324 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the ruggedized device d...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 20V 5.3A 8-SOICThe FETKY family of co-packaged MOSFETs and Schottky diodes IRF7322D1PbF offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET Power...
Vendor:Other Category:Other
The FETKY family IRF7322D1 of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET Power MO...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 30V 4.7A 8-SOICThe FETKYTM family of Co-packaged HEXFETs and Schottky diodes IRF7321D2PbF offer the designer an innovative board space saving solution for switching regulator and power management applications. Generation 5 HEXFETs util...
Vendor:Other Category:Other
The FETKYTM family of Co-packaged HEXFETs and Schottky diodes IRF7321D2 offer the designer an innovative board space saving solution for switching regulator and power management applications. Generation 5 HEXFETs utilize...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N+P 30V 4.9A 8-SOIC The IRF7319PBF has the following features including generation V technology;ultra low on-resistance;dual N and P channel mosfet;surface mount;fully avalanche rated;lead-free. Both the IRF7319PBF and PT6715 se...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N+P 30V 4.9A 8-SOICFifth Generation HEXFETs IRF7319 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...
Vendor:Other Category:Other
Fifth Generation HEXFETs IRF7317 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET DUAL P-CH 30V4.9A 8-SOICSpecifically designed IRF7316QPbF for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Ad...
Vendor:Other Category:Other
The IRF7316 is HEXFET@ power MOSFET.The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of powerapplications. With these...
Mfg:IOR D/C:00+01+05+ Vendor:Other Category:Other
Specifically designed for Automotive applications, these HEXFET ® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional fe...
Mfg:IR Pack:SMD Vendor:Other Category:Other
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET HEX N-CH DUAL 30V 8-SOICSpecifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional fea...
Mfg:IR Pack:SOP-8 D/C:07+ Vendor:Other Category:Other
Vendor:Other Category:Other
Fifth Generation HEXFETs IRF7311 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...
Vendor:Other Category:Other
The IRF730SPbF is a kind of HEXFET power MOSFET. Third Generation HEXFETs integrates the features of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for...
Vendor:Other Category:Other
Power MOSFET IRF730S, SiHF730S
Vendor:Other Category:Other
The IRF730N is designed as one kind of HEXFET power MOSFET that is well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. Also this device can be used in an ap...
Mfg:FSC Pack:03+ D/C:TO-220 Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRF730B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology IRF730B has been especially tailored tominimize on-stat...
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Mfg:IR Vendor:Other Category:Other
Mfg:IR Pack:TO-262 D/C:5000 Vendor:Other Category:Other
Vendor:Other Category:Other
Power MOSFET IRF730A, SiHF730A
Vendor:Other Category:Other
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N/P-CH 30V 8-SOICSpecifically designed for Automotive applications, these HEXFET® Power MOSFET's IRF7309QPbF in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Ad...
Vendor:Other Category:Other
Mfg:IOR Pack:SMD-8 D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N+P 30V 3A 8-SOICFifth Generation HEXFETs IRF7309 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET HEX N/P-CH DUAL 20V 8SOICSpecifically designed for Automotive applications IRF7307QPbF, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Ad...
Vendor:Other Category:Other
Fifth Generation HEXFETs IRF7307 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and...
Mfg:IR Pack:SOP-8 D/C:07+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH DUAL 30V 8-SOICSpecifically designed for Automotive applications IRF7306QPbF, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Ad...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET 2P-CH 30V 3.6A 8-SOICFifth Generation HEXFETs IRF7306 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH DUAL 20V 8-SOICSpecifically designed for Automotive applications IRF7304QPbF, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Ad...
Mfg:IRF Pack:SO-8 D/C:08+ Vendor:Other Category:Other
Vendor:Other Category:Other
techniques to achieve the lowest possible on-resistance per silicon area IRF7304. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides ...
Vendor:Other Category:Other
Vendor:Other Category:Other
Fifth Generation HEXFETs IRF7303 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET 2N-CH 20V 5.2A 8-SOICFifth Generation HEXFETs IRF7301 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and...
Vendor:Other Category:Other
Power MOSFET IRF730, SiHF730
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 400V 5.5A TO-220This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode o...
Mfg:IR Pack:SOP-8 D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 40V 6.2A 8-SOICNew trench HEXFET® Power MOSFETs IRF7241PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized devi...
Vendor:Other Category:Other
New trench HEXFET® Power MOSFETs IRF7241 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device ...
Mfg:IR Pack:SOP-8 D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 40V 10.5A 8-SOICThese P-Channel MOSFETs IRF7240PbF from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely eff...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 40V 10.5A 8-SOICThese P-Channel MOSFETs IRF7240 from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely effici...
Mfg:IR Pack:SOP-8 D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 12V 9.5A 8-SOICThese P-Channel MOSFETs IRF7233PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficie...
Mfg:IOR Pack:SMD-8 Vendor:Other Category:Other
Mfg:IR Pack:SOP-8 D/C:09+ Vendor:Other Category:Other
These P-Channel MOSFETs IRF7220PbF from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely eff...
Vendor:Other Category:Other
These P-Channel MOSFETs IRF7220 from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely effici...
Mfg:IR Pack:SOP-8 D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 12V 16A 8-SOICThese P-Channel MOSFETs IRF7210PbF from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely eff...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 12V 16A 8-SOICThese P-Channel MOSFETs IRF7210 from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely effici...
Vendor:Other Category:Other
The IRF720SPbF is designed as third generation HEXFET from international recitifier which provide the designer with the best conbination of fast switching, ruggedized device design, low on-resistance and cost-effectivene...
Vendor:Other Category:Other
Power MOSFET IRF720S, SiHF720S
Vendor:Other Category:Other
The IRF720S has seven features.The first one is surface mount.The second one is available in tape & reel.The third one is dynamic dv/dt rating.The fourth one is repetitive avalanche rated.The fifth one is fast switch...
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRF720B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology IRF720B has been especially tailored to minimize on-sta...
Mfg:SAMSUNG Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Mfg:IR Pack:SOP-8 D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 20V 5.4A 8-SOICFifth Generation HEXFET® Power MOSFETs IRF7207PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swit...
Vendor:Other Category:Other
Fifth Generation HEXFET® Power MOSFETs IRF7207 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi...
Vendor:Other Category:Other
Fourth Generation HEXFETs IRF7205 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed an...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 20V 5.3A 8-SOIC The featrues of IRF7204PbF are Adavanced Process Technology, Ultra Low On Resistance, a P-Channel MOSFET, Surface Mount, a Available in Tape & Reel, Dynamic dv/dt Rating, Fast Switching, Lead-Free.Fourth Genera...
Vendor:Other Category:Other
Fourth Generation HEXFETs IRF7204 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed an...
Mfg:IR Pack:SOP-8 D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 30V 7.3A 8-SOICFifth Generation HEXFET® power MOSFETs IRF7201PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swit...
Mfg:IR Pack:SMD-8 Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs IRF7201 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi...
Vendor:Other Category:Other
Power MOSFET IRF720, SiHF720
Vendor:Other Category:Other
Power MOSFET IRF710S, SiHF710S
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRF710B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology IRF710B has been especially tailored to minimize on-sta...
Mfg:IR Pack:SOP/8 D/C:06+ Vendor:Other Category:Other
Fourth Generation HEXFETs of the IRF7107 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching ...
Mfg:IOR Pack:SMD-8 Vendor:Other Category:Other
Fourth Generation HEXFETs of the IRF7106 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching s...
Vendor:Other Category:Other
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N/P-CH DUAL 25V 8-SOICThe IRF7105PbF is designed as one kind of insulated gatebipolar transistor which producted by the International Rectifier.Featrues of the IRG4BC30K-SPbF are:(1)hign short circuit rating optimized for motor control,Tsc=1...
Mfg:IR Pack:SO8 D/C:05+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET 2P-CH 20V 2.3A 8-SOICFifth Generation HEXFETs IRF7104PbF from lnternational Rectifierutilize advanced pro cessing techniques to achieve extremely low on-resistance per siling speed and ruggedized device with the fast switching speed and rugg...
Mfg:IOR Pack:SMD-8 Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET 2P-CH 20V 2.3A 8-SOICFourth Generation HEXFETs IRF7104 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed an...
Mfg:IR Pack:SOP-8 D/C:07+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 50V 3A 8-SOICSpecifically designed for Automotive applications IRF7103QPbF, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Ad...
Vendor:Other Category:Other
Specifically designed for Automotive applications IRF7103Q, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Addit...
Vendor:Other Category:Other
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 50V 3A 8-SOICFourth Generation HEXFETs of the IRF7103 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching s...
Vendor:Other Category:Other
Power MOSFET IRF710, SiHF710
Mfg:IR Pack:TO-220 D/C:09+ Vendor:Other Category:Other
This N-Channel enhancement mode silicon gate power field effect transistor of the IRF710 is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mo...
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 30V 32A DIRECTFETThe IRF6727MTRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and onl...
Vendor:Other Category:Other
The IRF6727MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only ...
Vendor:Other Category:Other
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 30V 32A DIRECTFETThe IRF6726MTRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and onl...
Vendor:Other Category:Other
The IRF6726MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only ...
Vendor:Other Category:Other
Mfg:IR_F Pack:N/A D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 30V 28A DIRECTFETThe IRF6725MTRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and onl...
Vendor:Other Category:Other
The IRF6725MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only ...
Vendor:Other Category:Other
Vendor:Other Category:Other
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