Mounting Style
: SMD/SMT
Transistor Polarity
: P-Channel
Gate-Source Breakdown Voltage
: 12 V
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Configuration
: Single Quad Drain Triple Source
Resistance Drain-Source RDS (on)
: 7 mOhms
Package / Case
: SOIC-8
Drain-Source Breakdown Voltage
: - 12 V
Continuous Drain Current
: - 16 A
Features: Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-FreePinout
Specifications
| Parameter |
Symbol |
Ratings |
Unit |
Drain-Source Voltage
Gate-Source Voltage |
VDS
VGS |
-12
±12 |
V
V |
Continuous Drain Current3 VGS @ -4.5V
Continuous Drain Current3 VGS @ -4.5V |
ID @TA=25
ID @TA=70 |
±16
±12 |
A
A |
Pulsed Drain Current1
Power Dissipation
Power Dissipation |
IDM
PD @TA=25
PD @TA=70
|
±100
2.5
1.6
|
A
W
W |
| Gate-to-Source Voltage Single Pulse tp<10s |
VGSM |
16 |
V |
| Operating Junction and Storage Temperature Range |
Tj,Tstg |
-55 ~ +150 |
|
| Linear Derating Factor |
|
0.02 |
W/ |
DescriptionThese P-Channel MOSFETs IRF7210PbF from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The SO-8 IRF7210PbF has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
Parameters: | Technical/Catalog Information | IRF7210PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25° C | 16A |
| Rds On (Max) @ Id, Vgs | 7 mOhm @ 16A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 17179pF @ 10V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 212nC @ 5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7210PBF
IRF7210PBF
|
IRF7210PBF Data Sheet
