Mounting Style
: SMD/SMT
Transistor Polarity
: P-Channel
Drain-Source Breakdown Voltage
: - 20 V
Gate-Source Breakdown Voltage
: 12 V
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Configuration
: Single Quad Drain Triple Source
Package / Case
: SOIC-8
Resistance Drain-Source RDS (on)
: 60 mOhms
Continuous Drain Current
: - 5.4 A
Features: Generation 5 Technology
P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-FreePinout
Specifications
| |
Parameter |
Max. |
Units |
| VDS |
Drain- Source Voltage |
-20 |
V |
| ID @ TA = 25 |
Continuous Drain Current, VGS @ -4.5V |
-5.4 |
A |
| ID @ TA= 70 |
Continuous Drain Current, VGS @ -4.5V |
-43 |
| IDM |
Pulsed Drain Current |
-43 |
| PD @TA = 25 |
Power Dissipation |
2.5 |
W |
| PD @TA = 70 |
Power Dissipation |
1.6 |
| |
Linear Derating Factor |
0.02 |
W/ |
| VGS |
Gate-to-Source Voltage |
±12 |
V |
| VGSM |
Gate-to-Source Voltage Single Pulse tp<10s |
-16 |
V |
| EAS |
Single Pulse Avalanche Energy |
140 |
|
| dv/dt |
Peak Diode Recovery dv/dt |
-5.0 |
V/ns |
| TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
|
DescriptionFifth Generation HEXFET® Power MOSFETs IRF7207PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 IRF7207PbF has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
Parameters: | Technical/Catalog Information | IRF7207PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 5.4A |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 5.4A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 780pF @ 15V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 22nC @ 4.5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7207PBF
IRF7207PBF
|
IRF7207PBF Data Sheet
