IRF7307QPBF

Configuration :
Maximum Operating Temperature :
Packaging :
Mounting Style : SMD/SMT
Gate-Source Breakdown Voltage : 12 V
Drain-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Transistor Polarity : N and P-Channel
Resistance Drain-Source RDS (on) : 50 mOhms
Continuous Drain Current : 5.2 A


Application

· Advanced Process Technology
· Ultra Low On-Resistance
· Dual N and P Channel MOSFET
· Surface Mount
· Available in Tape & Reel
· 150°C Operating Temperature
· Automotive [Q101] Qualified
· Lead-Free


Pinout




Description

Specifically designed for Automotive applications IRF7307QPbF, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

These benefits IRF7307QPbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

Parameters:

Technical/Catalog Information	IRF7307QPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	5.2A, 4.3A
Rds On (Max) @ Id, Vgs	50 mOhm @ 2.6A, 4.5V
Input Capacitance (Ciss) @ Vds	610pF @ 15V
Power - Max	2W
Packaging	Tube
Gate Charge (Qg) @ Vgs	20nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7307QPBF IRF7307QPBF