IRF730AL

Series: -
Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 22nC @ 10V
Drain to Source Voltage (Vdss): 400V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Mounting Type: Through Hole
Power - Max: 74W
Current - Continuous Drain (Id) @ 25° C: 5.5A
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) @ Vds: 600pF @ 25V
Supplier Device Package: I2PAK
Packaging: Bulk


Application

 Switch Mode Power Supply (SMPS)
 Uninterruptable Power Supply
 High speed power switching


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V†	5.5	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V†	3.5
IDM	Pulsed Drain Current †	22
PD @TC = 25°C	Power Dissipation	74	W
	Linear Derating Factor	0.6	W/°C
VGS	Gate-to-Source Voltage	± 30	V
dv/dt	Peak Diode Recovery dv/dt Ġ	4.6	V/ns
TJ	Operating Junction and	-55 to + 150	°C
TSTG	Storage Temperature Range
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )