Drain-Source Breakdown Voltage
: 25 V
Mounting Style
: SMD/SMT
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: 20 V
Package / Case
: SOIC-8
Transistor Polarity
: N and P-Channel
Configuration
: Dual Dual Drain
Resistance Drain-Source RDS (on)
: 160 mOhms
Continuous Drain Current
: 3.5 A
Features: SpecificationsDescriptionThe IRF7105PbF is designed as one kind of insulated gatebipolar transistor which producted by the International Rectifier.Featrues of the IRG4BC30K-SPbF are:(1)hign short circuit rating optimized for motor control,Tsc=10 us,@360 V Vce(start),Tj=125,Vge=15 V;(2)combines low conduction losses with high switching speed;(3)lastest generation design provides tighter parameter distribution and higher efficiency than previous generations;(4)lead-free.
Benefits of the IRF7105PbF are:(1)as a freewheeling diode we recommend our HEXFRED ultrafast,ultrasoft recovery diodes for minimum EMI/noise and switching losses in the diode and IGBT;(2)lastest generation 4 IGBTs offer highest power density motor controls possible;(3)this part replaces the IRG4BC30K-S and IRG4BC30M-S devices.
The absolute maximum ratings of the IRF7105PbF can be summarized as:(1)collector-to-emitter voltage:600 V;(2)comtinuous collector current:28 A;(3)continuous collector current:16 A;(4)pulsed collector current:58 A;(5)clamped inductive load current:58 A;(6)gate-to-emitter voltage:+/-20 V;(7)reverse voltage avalanche energy:260 mJ;(8)maximum power dissipation:100 W;(9)operating junction and storage temperature range:-55 to +150;(10)soldering temperature,for 10 sec.:300.If you want to know more information about this part,please download the datasheet in www.seekic.com and www.chinaicmart.com .
Parameters: | Technical/Catalog Information | IRF7105PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N and P-Channel |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 3.5A, 2.3A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 1A, 10V |
| Input Capacitance (Ciss) @ Vds | 330pF @ 15V |
| Power - Max | 2W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 27nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7105PBF
IRF7105PBF
|
IRF7105PBF Data Sheet
