FET Feature: Logic Level Gate
Mounting Type: Surface Mount
FET Type: 2 P-Channel (Dual)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Drain to Source Voltage (Vdss): 12V
Power - Max: 2W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Series: HEXFET®
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 7.8A
Packaging: Tube
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V
Gate Charge (Qg) @ Vgs: 33nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 2020pF @ 10V
Features: * Trench Technology
*Ultra Low On-Resistance
*Dual P-Channel MOSFET
*Low Profile (<1.8mm)
*Available in Tape & ReelPinout
Specifications
|
Parameter |
Max. |
Units |
| VDS |
Drain- Source Voltage |
-12 |
V |
| ID @ TA = 25 |
Continuous Drain Current, VGS @ -4.5V |
-7.8 |
A |
| ID @ TA = 70 |
Continuous Drain Current, VGS @ -4.5V |
-6.2 |
| IDM |
Pulsed Drain Current |
-39 |
| PD @TA = 25 |
Power Dissipation |
2.0 |
W |
| PD @TA = 70 |
Power Dissipation |
1.3 |
|
Linear Derating Factor |
16 |
W/ |
| VGS |
Gate-to-Source Voltage |
± 8.0 |
V |
| TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
|
DescriptionNew P-Channel HEXFET® power MOSFETs IRF7325 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 IRF7325 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.
Parameters: | Technical/Catalog Information | IRF7325 |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25° C | 7.8A |
| Rds On (Max) @ Id, Vgs | 24 mOhm @ 7.8A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 2020pF @ 10V |
| Power - Max | 2W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 33nC @ 4.5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF7325
IRF7325
|
IRF7325 Data Sheet
