IRF7309QPBF

Configuration :
Maximum Operating Temperature :
Packaging :
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Transistor Polarity : N and P-Channel
Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 80 mOhms


Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· Dual N and P Channel MOSFET
· Surface Mount
· Available in Tape & Reel
· 150°C Operating Temperature
· Automotive [Q101] Qualified
· Lead-Free


Specifications




Description

Specifically designed for Automotive applications, these HEXFET® Power MOSFET's IRF7309QPbF in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

The efficient SO-8 package IRF7309QPbF provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

Parameters:

Technical/Catalog Information	IRF7309QPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	4A, 3A
Rds On (Max) @ Id, Vgs	50 mOhm @ 2.4A, 10V
Input Capacitance (Ciss) @ Vds	*
Power - Max	1.4W
Packaging	Tube
Gate Charge (Qg) @ Vgs	25nC @ 4.5V
Package / Case	8-SOIC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7309QPBF IRF7309QPBF