IRF7241PBF

Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Resistance Drain-Source RDS (on) : 70 mOhms
Drain-Source Breakdown Voltage : - 40 V
Continuous Drain Current : - 6.2 A


Features:

· Trench Technology
· Ultra Low On-Resistance
· P-Channel MOSFET
· Available in Tape & Reel
· Lead-Free


Pinout




Specifications

	Parameter	Max.	Units
VDS	Drain- Source Voltage	-40	V
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	-6.2	A
ID @ TA = 70	Continuous Drain Current, VGS @ 10V	-4.9
IDM	Pulsed Drain Current	-25
PD @TA = 25	Power Dissipation	2.5	W
PD @ TA = 70	Power Dissipation	1.6
	Linear Derating Factor	20	mW/
VGS	Gate-to-Source Voltage	±20	V
TJ ,TSTG	Junction and Storage Temperature Range	-55 to + 150

Description

New trench HEXFET^® Power MOSFETs IRF7241PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.

Parameters:

Technical/Catalog Information	IRF7241PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	6.2A
Rds On (Max) @ Id, Vgs	41 mOhm @ 6.2A, 10V
Input Capacitance (Ciss) @ Vds	3220pF @ 25V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	80nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7241PBF IRF7241PBF