IRF730N

The IRF730N is designed as one kind of HEXFET power MOSFET that is well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. Also this device can be used in an application with dramatically reduced board space. Features of this device are:(1)generation V technology; (2)ultra low on-resistance; (3)dual N-channel mosfet; (4)surface mount; (5)available in tape & reel; (6)dynamic dv/dt rating; (7)fast switching.

The absolute maximum ratings of the IRF730N can be summarized as:(1)ID @ TA = 25°C, 10 Sec. Pulsed Drain Current, VGS @ 4.5V: 5.7 A;(2)ID @ TA = 25°C, Continuous Drain Current, VGS @ 4.5V: 5.2 A;(3)Pulsed Drain Current: 21 A;(4)Power Dissipation: 2.0 W;(5)Linear Derating Factor: 0.016 W/°C;(6)Gate-to-Source Voltage: ±12 V;(7)Peak Diode Recovery dv/dt: 5.0 V/ns;(8)Operating Junction and Storage Temperature Range: -55 to + 150 °C;(9)Maximum Junction-to-Ambient: 62.5 °C/W.

The electrical characteristics of the IRF730N can be summarized as:(1)Drain-to-Source Breakdown Voltage: 20 V;(2)Breakdown Voltage Temp. Coefficient: 0.044 V/°C;(3)Static Drain-to-Source On-Resistance: 0.050 ;(4)Gate Threshold Voltage: 0.70 V;(5)Gate-to-Source Forward Leakage: 100 nA;(6)Gate-to-Source Reverse Leakage: -100 nA. If you want to know more information such as the electrical characteristics about the IRF840NPBF, please download the datasheet in www.seekic.com or www.chinaicmart.com .