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IRF7319

MOSFET N+P 30V 4.9A 8-SOIC

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SeekIC No. : 004376724 Detail

IRF7319: MOSFET N+P 30V 4.9A 8-SOIC

IRF7319 Data Sheet

floor Price/Ceiling Price

US $ 1.32~1.32 / Piece | Get Latest Price
Part Number:
IRF7319
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~380
  • Unit Price
  • $1.32
  • Processing time
  • 15 Days
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Product Details

Description



Features:

*Generation V Technology
* Ultra Low On-Resistance
* Dual N and P Channel MOSFET
* Surface Mount
* Fully Avalanche Rated




Pinout

Connection Diagram




Specifications

Symbol Maximum Units
N-Channel P-Channel
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VDS ± 20
Continuous Drain Current TA = 25 ID 6.5 -4.9 A
TA = 70 5.2 -3.9
Pulsed Drain Current IDM 30 -30
Continuous Source Current (Diode Conduction) IS 2.5 -2.5
Maximum Power Dissipation TA = 25 PD 2.0 W
TA = 70 1.3
Single Pulse Avalanche Energy EAS 82 140 mJ
Avalanche Current IAR 4.0 -2.8 A
Repetitive Avalanche Energy EAR 0.20 mJ
Peak Diode Recovery dv/dt dv/dt 5.0 -5.0 V/ ns
Junction and Storage Temperature Range TJ, TSTG -55 to + 150





Description

Fifth Generation HEXFETs IRF7319 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SO-8 IRF7319 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application withdramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.






Parameters:

Technical/Catalog InformationIRF7319
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C6.5A, 4.9A
Rds On (Max) @ Id, Vgs29 mOhm @ 5.8A, 10V
Input Capacitance (Ciss) @ Vds 650pF @ 25V
Power - Max2W
PackagingBulk
Gate Charge (Qg) @ Vgs33nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET Feature*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF7319
IRF7319



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