DescriptionThe IRF7316 is HEXFET@ power MOSFET.The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of powerapplications. With these improvements, multiple devices can be used in an application with ...
IRF7316: DescriptionThe IRF7316 is HEXFET@ power MOSFET.The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety...
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The IRF7316 is HEXFET@ power MOSFET.The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of powerapplications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
Features of the IRF7316 are:(1)generation v technology; (2)ultra low on-resistance; (3)dual p-channel mosfet; (4)surface mount; (5)fully avalanche rated.Fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The absolute maximum ratings of the IRF7316 can be summarized as:(1)drain source voltage Vds:-30V;(2)gate source voltage Vgs:±20V;(3)pulsed drain current Idm:-30A;(4)continuous source current (diode conduction) Is:-2.5A;(4)single pulse avalanche energy Eas:140mJ;(5)avalanche current Iar:-2.8 A;(5)repetitive avalanche energy Ear:0.20mJ.Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control IRF7316, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).