IRF7107

Specifications Max. N-Channel P-Channel ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 3.0 -2.8 A ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 2.5 -2.3 IDM Pulsed Drain Current 10 -10 PD @TC = 25°C Power Dissipa...

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IRF7107 Picture
SeekIC No. : 004376689 Detail

IRF7107: Specifications Max. N-Channel P-Channel ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 3.0 -2.8 A ID @ TC = 70°C Continuous Drain Current, VGS...

floor Price/Ceiling Price

Part Number:
IRF7107
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Description



Specifications

Max.
N-Channel
P-Channel
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
3.0
-2.8
A
ID @ TC = 70°C
Continuous Drain Current, VGS @ 10V
2.5
-2.3
IDM
Pulsed Drain Current
10
-10
PD @TC = 25°C
Power Dissipation
2.0
Linear Derating Factor
0.016
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak Diode Recovery dv/dt
3.0
-1.3
V/ns
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C



Description

Fourth Generation HEXFETs of the IRF7107 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications.

The SO-8 of the IRF7107 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.  With these improvements, multiple devices can be used in an application with dramatically reduced board space.  The package is designed for vapor phase, infra-red, or wave soldering techniques.  Power dissipation of greater than 0.8W is possible in a typical PCB mount application.




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