Specifications Max. N-Channel P-Channel ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 3.0 -2.8 A ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 2.5 -2.3 IDM Pulsed Drain Current 10 -10 PD @TC = 25°C Power Dissipa...
IRF7107: Specifications Max. N-Channel P-Channel ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 3.0 -2.8 A ID @ TC = 70°C Continuous Drain Current, VGS...
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Max. |
||||
N-Channel |
P-Channel |
|||
ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
3.0 |
-2.8 |
A |
ID @ TC = 70°C |
Continuous Drain Current, VGS @ 10V |
2.5 |
-2.3 | |
IDM |
Pulsed Drain Current |
10 |
-10 | |
PD @TC = 25°C |
Power Dissipation |
2.0 |
||
Linear Derating Factor |
0.016 |
|||
VGS |
Gate-to-Source Voltage |
± 20 |
V | |
dv/dt |
Peak Diode Recovery dv/dt |
3.0 |
-1.3 |
V/ns |
TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
°C |
Fourth Generation HEXFETs of the IRF7107 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8 of the IRF7107 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.