IRF7316QPBF

MOSFET

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SeekIC No. : 00159422 Detail

IRF7316QPBF: MOSFET

floor Price/Ceiling Price

Part Number:
IRF7316QPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : - 4.9 A
Configuration : Dual Mounting Style : SMD/SMT
Package / Case : SOIC-8    

Description

Resistance Drain-Source RDS (on) :
Maximum Operating Temperature :
Packaging :
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Configuration : Dual
Drain-Source Breakdown Voltage : - 30 V
Continuous Drain Current : - 4.9 A


Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` Dual P- Channel MOSFET
` Surface Mount
` Available in Tape & Reel
` 150 Operating Temperature
` Automotive [Q101] Qualified
` Lead-Free




Specifications

Characteristic Symbol Value Units
Drain-source voltage VDS ?20 V
Gate-source voltage VGS ±12 V
Continuous Drain Current TA=25 ID -4.9 A
TA=70 -3.9
Pulsed Drain Current IDM -30
Continuous Source Current (Diode Conduction) IS -2.5

Maximum Power Dissipation

TA=25 PD 0.58 W
TA=70 0.36
Single-pulse avalanche energy EAS 6.5 mJ
Avalanche current IAR -5 A
Repetitive Avalanche Energy
EAR 0.20 mJ
Peak Diode Recovery dV/dt dV/dt -5.0 V/ns
Junction and Storage Temperature Range TJ, TSTG - 55 to +150



Description

Specifically designed IRF7316QPbF for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

The efficient SO-8 package IRF7316QPbF provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.




Parameters:

Technical/Catalog InformationIRF7316QPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C4.9A
Rds On (Max) @ Id, Vgs58 mOhm @ 4.9A, 10V
Input Capacitance (Ciss) @ Vds 710pF @ 25V
Power - Max2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs34nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET Feature*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF7316QPBF
IRF7316QPBF



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