MOSFET
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 30 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | - 4.9 A |
Configuration : | Dual | Mounting Style : | SMD/SMT |
Package / Case : | SOIC-8 |
` Advanced Process Technology
` Ultra Low On-Resistance
` Dual P- Channel MOSFET
` Surface Mount
` Available in Tape & Reel
` 150 Operating Temperature
` Automotive [Q101] Qualified
` Lead-Free
Characteristic | Symbol | Value | Units | |
Drain-source voltage | VDS | ?20 | V | |
Gate-source voltage | VGS | ±12 | V | |
Continuous Drain Current | TA=25 | ID | -4.9 | A |
TA=70 | -3.9 | |||
Pulsed Drain Current | IDM | -30 | ||
Continuous Source Current (Diode Conduction) | IS | -2.5 | ||
Maximum Power Dissipation |
TA=25 | PD | 0.58 | W |
TA=70 | 0.36 | |||
Single-pulse avalanche energy | EAS | 6.5 | mJ | |
Avalanche current | IAR | -5 | A | |
Repetitive Avalanche Energy |
EAR | 0.20 | mJ | |
Peak Diode Recovery dV/dt | dV/dt | -5.0 | V/ns | |
Junction and Storage Temperature Range | TJ, TSTG | - 55 to +150 |
Specifically designed IRF7316QPbF for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
The efficient SO-8 package IRF7316QPbF provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
Technical/Catalog Information | IRF7316QPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 P-Channel (Dual) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 4.9A |
Rds On (Max) @ Id, Vgs | 58 mOhm @ 4.9A, 10V |
Input Capacitance (Ciss) @ Vds | 710pF @ 25V |
Power - Max | 2W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 34nC @ 10V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF7316QPBF IRF7316QPBF |