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IRF7328

Features: · Trench Technology· Ultra Low On-Resistance· Dual P-Channel MOSFET· Available in Tape & ReelSpecifications Parameter Max. Units VDS Drain-Source Voltage -30 V ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -8.0 A ID @ TA = 70°C Continuous Drain Current,...

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SeekIC No. : 004376727 Detail

IRF7328: Features: · Trench Technology· Ultra Low On-Resistance· Dual P-Channel MOSFET· Available in Tape & ReelSpecifications Parameter Max. Units VDS Drain-Source Voltage -30 V ID @ T...

IRF7328 Data Sheet

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Part Number:
IRF7328
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Description



Features:

· Trench Technology
·  Ultra Low On-Resistance
·  Dual P-Channel MOSFET
·  Available in Tape & Reel


Specifications

  Parameter Max. Units
VDS Drain-Source Voltage -30 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -8.0 A
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -6.4 A
IDM Pulsed Drain Current -32 A
PD @TA = 25°C Maximum Power Dissipation 2.0 W
PD @TA = 70°C Maximum Power Dissipation 1.3 W
  Linear Derating Factor 16 mW/°C
VGS Gate-to-Source Voltage ± 20 V
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C



Description

New trench HEXFET® Power MOSFETs IRF7328 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.




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