IRF7304QPBF

Maximum Operating Temperature :
Packaging :
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : 12 V
Continuous Drain Current : - 4.3 A
Package / Case : SOIC-8
Configuration : Dual
Resistance Drain-Source RDS (on) : 140 mOhms


Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` Dual P Channel MOSFET
` Surface Mount
` Available in Tape & Reel
` 150 Operating Temperature
` Automotive [Q101] Qualified
` Lead-Free


Specifications

	Parameter	Max.	Unit
ID @ TA= 25	Continuous Drain Current, VGS @ -4.5V	-4.7	A
ID @ TA= 25	Continuous Drain Current, VGS @ -4.5V	-4.3	A
ID @ TA= 70	Repetitive Peak Current,VGS @ -4.5V	-3.4	A
IDM	Pulsed Drain Current	-17	A
PD @TA= 25	Power Dissipation	2.0	W
	Linear Derating Factor	0.016	W/
VGS	Gate-to-Source Voltage	±12	V
dv/dt	Peak Diode Recovery dv/dt	-5.0	V/ns
TJ,TSTG	Junction and Storage Temperature Range	-55 to + 150

Description

Specifically designed for Automotive applications IRF7304QPbF, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

The efficient SO-8 package IRF7304QPbF provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

Parameters:

Technical/Catalog Information	IRF7304QPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	4.3A
Rds On (Max) @ Id, Vgs	90 mOhm @ 2.2A, 4.5V
Input Capacitance (Ciss) @ Vds	610pF @ 15V
Power - Max	2W
Packaging	Tube
Gate Charge (Qg) @ Vgs	22nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7304QPBF IRF7304QPBF