Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25° C: 5.4A
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 22nC @ 4.5V
Packaging: Tube
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 780pF @ 15V
Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.4A, 4.5V
Features: *Generation 5 Technology
* P-Channel Mosfet
* Surface Mount
* Available in Tape & Reel
* Dynamic dv/dt Rating
* Fast SwitchingPinout
Specifications
|
Parameter |
Max. |
Units |
| VDS |
Drain- Source Voltage |
-20 |
V |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V |
-5.4 |
A |
| ID @ TC = 70 |
Continuous Drain Current, VGS @ 10V |
-4.3 |
| IDM |
Pulsed Drain Current |
-43 |
| PD @TC = 25 |
Power Dissipation |
2.5 |
W |
| PD @TC = 70 |
Power Dissipation |
1.6 |
|
Linear Derating Factor |
0.02 |
W/ |
| VGS |
Gate-to-Source Voltage |
± 12 |
V |
| VGSM |
Gate-to-Source Voltage Single Pulse tp<10µs |
-16 |
V |
| EAS |
Single Pulse Avalanche Energy |
140 |
|
| dv/dt |
Peak Diode Recovery dv/dt |
-5.0 |
V/ns |
| TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
|
DescriptionFifth Generation HEXFET® Power MOSFETs IRF7207 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 IRF7207 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
IRF7207 Data Sheet
