FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 28nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 7.3A
Packaging: Tube
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.3A, 10V
Input Capacitance (Ciss) @ Vds: 550pF @ 25V
Features: * Generation V Technology
* Ultra Low On-Resistance
* N-Channel MOSFET
* Surface Mount
* Available in Tape & Reel
* Dynamic dv/dt Rating
* Fast SwitchingPinout
Specifications
| |
Parameter |
Max. |
Units |
| VDS |
Drain- Source Voltage |
30 |
V |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V |
7.3 |
A |
| ID @ TC = 70 |
Continuous Drain Current, VGS @ 10V |
5.8 |
| IDM |
Pulsed Drain Current |
58 |
| PD @TC = 25 |
Power Dissipation |
2.5 |
W |
| PD @TC = 70 |
Power Dissipation |
1.6 |
| |
Linear Derating Factor |
0.02 |
W/ |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| VGSM |
Gate-to-Source Voltage Single Pulse tp<10µs |
30 |
V |
| EAS |
Single Pulse Avalanche Energy |
70 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
| TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
|
DescriptionFifth Generation HEXFET® power MOSFETs IRF7201 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 IRF7201 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
IRF7201 Data Sheet
