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Mfg:IR Pack:MO-036AB D/C:05+ Vendor:Other Category:Other
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Mfg:HARRIS Pack:CAN3 D/C:05+ Vendor:Other Category:Other
Mfg:HARRIS Pack:CAN3 D/C:05+ Vendor:Other Category:Other
Mfg:HARRIS Pack:CAN3 D/C:05+ Vendor:Other Category:Other
Mfg:INTERSIL Pack:CAN3 D/C:05+ Vendor:Other Category:Other
The HEXFET® technology IRFF9110 is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very ...
Mfg:IR Pack:TO-205AF D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:CAN3 D/C:05+ Vendor:Other Category:Other
Mfg:HARRIS Pack:CAN D/C:05+ Vendor:Other Category:Other
This N-Channel enhancement mode silicon gate power field effect transistor IRFF420 is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of ...
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
This N-Channel enhancement mode silicon gate power field effect transistor IRFF330 is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode ...
Mfg:HARRIS Pack:CAN3 D/C:05+ Vendor:Other Category:Other
Mfg:HARRIS Pack:CAN D/C:05+ Vendor:Other Category:Other
The IRFF310 are ultra-fast ECL comparators capable of very short propagation delays. Their design maintains the excellent DC matching characteristics normally found only in slower comparators.The IRFF310 have differentia...
Mfg:RCA Pack:CAN3 D/C:05+ Vendor:Other Category:Other
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operatio...
Vendor:Other Category:Other
The IRFF220 is a kind of N-channel enhancement mode silicon date power field effect MOSFET. It is available in the TO-205AF package and is designed for applications suchas switching regulators, switching convertors, moto...
Mfg:HARRIS Pack:CAN3 D/C:05+ Vendor:Other Category:Other
The HEXFET®technology IRFF210 is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest"State of the Art" design achieves: ...
Mfg:RCA Pack:CAN3 D/C:05+ Vendor:Other Category:Other
This N-Channel enhancement mode silicon gate power field effect transistor of the IRFF130 is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche m...
Mfg:IR Pack:CAN Vendor:Other Category:Other
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Mfg:IR Pack:TO-205AF D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:28-pin LCC D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:18-pin LCC D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:18-pin LCC D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:18-pin LCC D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:18-pin LCC D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:18-pin LCC D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:18-pin LCC D/C:05+ Vendor:Other Category:Other
Mfg:N/A Pack:CLCC D/C:N/A Vendor:Other Category:Other
Mfg:IR Pack:18-pin LCC D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:18-pin LCC D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:18-pin LCC D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:18-pin LCC D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:18-pin LCC D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:18-pin LCC D/C:05+ Vendor:Other Category:Other
The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged to be a close replacement for the TO-39 package, the LCC will give designers the e...
Mfg:IR Pack:18-pin LCC D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:18-pin LCC D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:18-pin LCC D/C:05+ Vendor:Other Category:Other
The leadless chip carrier (LCC) package IRFE120 represents the logical next step in the continual evolution of surface mount technology. Desinged to be a close replacement for the TO-39 package, the LCC will give designe...
Mfg:IR Pack:18-pin LCC D/C:05+ Vendor:Other Category:Other
The leadless chip carrier (LCC) IRFE110 package represents the logical next step in the continual evolution of surface mount technology. Desinged to be a close replacement for the TO-39 package, the LCC will give designe...
Mfg:N/A Pack:CLCC D/C:N/A Vendor:Other Category:Other
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Power MOSFET IRFDC20, SiHFDC20
Mfg:IR Pack:N/A D/C:80 Vendor:Other Category:Other
Third Generation HEXFETs IRFDC20 from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The 4-pin DIP package IRF...
Vendor:Other Category:Other
Power MOSFET IRFD9220, SiHFD9220
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Power MOSFET IRFD9210, SiHFD9210
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Power MOSFET IRFD9120, SiHFD9120
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Power MOSFET IRFD9110, SiHFD9110
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The IRFD9024 is designed as one kind of P-Channel enhancement mode silicon gate power field effect transistor device that can be used in wide range of applications such as switching regulators, switching convertors, moto...
Vendor:Other Category:Other
Power MOSFET IRFD9020, SiHFD9020
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Power MOSFET IRFD9014, SiHFD9014
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Power MOSFET IRFD420, SiHFD420
Mfg:IR Pack:HEXDIP D/C:99+ Vendor:Other Category:Other
Third Generation HEXFETs IRFD420 from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The 4-pin DIP package IRF...
Vendor:Other Category:Other
Power MOSFET IRFD320, SiHFD320
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Third Generation HEXFETs IRFD320 from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4-pin DIP package...
Vendor:Other Category:Other
Power MOSFET IRFD310, SiHFD310
Mfg:INTERSIL Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
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Power MOSFET IRFD224, SiHFD224
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFD224 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The 4-pin DIP package IRF...
Vendor:Other Category:Other
Power MOSFET IRFD220, SiHFD220
Mfg:IR D/C:4 Vendor:Other Category:Other
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Power MOSFET IRFD214, SiHFD214
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Third Generation HEXFETs IRFD214 from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The 4-pin DIP package IRF...
Vendor:Other Category:Other
Power MOSFET IRFD210, SiHFD210
Mfg:INTERSIL Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Mfg:IR Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power field effect transistors IRFD1Z3 designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high po...
Mfg:IR Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power field effect transistors IRFD1Z2 designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high po...
Mfg:IR Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power field effect transistors IRFD1Z1 designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high po...
Mfg:IR Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power field effect transistors IRFD1Z0 designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high po...
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Power MOSFET IRFD123, SiHFD123
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Power MOSFET IRFD120, SiHFD120
Pack:DIP Vendor:Other Category:Other
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Power MOSFET IRFD110, SiHFD110
Mfg:IR D/C:4 Vendor:Other Category:Other
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Power MOSFET IRFD024, SiHFD024
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Power MOSFET IRFD014, SiHFD014
Vendor:Other Category:Other
The IRFD014 has seven features.The first one is dynamic dv/dt rating.The second one is repetitive avalanche rated.The third one is P-channel.The fourth one is 175 operating temperature.The fifth one is fast switching.The...
Vendor:Other Category:Other
The IRFC460AB has some electrical characteristics (wafer form).When parameter is V(BR)DSS,the description is drain-to-source breakdown voltage,the guaranteed (Min/Max) is 515V Min.,the test conditions is VGS=0V,ID=150A.W...
Vendor:Other Category:Other
The features of IRFC450 are: (1)fast switching times; (2)low RDS(on) HDMOS TM process; (3)rugged polysilicon gate cell structure; (4)excellent high voltage stability; (5)low input capacitance; (6)improved high temperatur...
Vendor:Other Category:Other
The IRFC43N50KB has some electrical characteristics (wafer form).When parameter is V(BR)DSS,the description is drain-to-source breakdown voltage,the guaranteed (Min/Max) is 500V Min.,the test conditions is VGS=0V,ID=250A...
Vendor:Other Category:Other
The IRFC37N50A has some electrical characteristics (wafer form).When parameter is V(BR)DSS,the description is drain-to-source breakdown voltage,the guaranteed (Min/Max) is 500V Min.,the test conditions is VGS=0V,ID=250A....
Vendor:Other Category:Other
The features of IRFC350 are: (1)fast switching times; (2)low RDS(on) HDMOS TM process; (3)rugged polysilicon gate cell structure; (4)excellent high voltage stability; (5)low input capacitance; (6)improved high temperatur...
Vendor:Other Category:Other
Vendor:Other Category:Other
The IRFC240 has some electrical characteristics (wafer form).When parameter is V(BR)DSS,the description is drain-to-source breakdown voltage,the guaranteed (Min/Max) is 200V Min.,the test conditions is VGS=0V,ID=100A.Whe...
Vendor:Other Category:Other
The features of IRFC150R are: (1)fast switching times; (2)low RDS(on) HDMOS TM process; (3)rugged polysilicon gate cell structure; (4)excellent high voltage stability; (5)low input capacitance; (6)improved high temperatu...
Vendor:Other Category:Other
The IRFC1404 has some electrical characteristics (wafer form).When parameter is V(BR)DSS,the description is drain-to-source breakdown voltage,the guaranteed (Min/Max) is 40V Min.,the test conditions is VGS=0V,ID=250A.Whe...
Vendor:Other Category:Other
The IRFC044 has some electrical characteristics (wafer form).When parameter is V(BR)DSS,the description is drain-to-source breakdown voltage,the guaranteed (Min/Max) is 60V Min.,the test conditions is VGS=0V,ID=100A.When...
Mfg:IR Pack:TO-220 D/C:05+ Vendor:International Rectifier Category:Discrete Semiconductor Products
HEX/MOS NCH 30V 250A SUPER D2PAK
Vendor:Other Category:Other
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Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
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The features of IRFBG30PBF are: (1)dynamic dv/dt rating; (2)repetitive avalanche rated; (3)fast switching; (4)ease of paralleling; (5)simple drive requirements.
The following is about the absolute maximum ratings of IRF...
Vendor:Other Category:Other
Power MOSFET IRFBG30, SiHFBG30
Mfg:IR Pack:TO-220 D/C:09+ Vendor:Other Category:Other
Third generation Power MOSFETs of the IRFBG30 from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness. The TO-IRFBG30 package is uni...
Vendor:Other Category:Other
Power MOSFET IRFBG20, SiHFBG20
Vendor:Other Category:Other
The features of IRFBG20 are: (1)dynamic dv/dt rating; (2)repetitive avalanche rated; (3)fast switching; (4)ease of paralleling; (5)simple drive requirements.
The following is about the absolute maximum ratings of IRFBG2...
Vendor:Other Category:Other
Power MOSFET IRFBF30, SiHFBF30
Vendor:Other Category:Other
The IRFBF20SPbF is designed as HEXFET power MOSFET.It would provide the designers with the best combination of fast switching, ruggedized device design, low-on-resistance and cost-effectiveness. IRFBF20SPbF ha...
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Third generation HEXFETs from international Rectifier of the IRFBF20S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The D2Pak of the ...
Vendor:Other Category:Other
The IRFBF20LPbF is designed as HEXFET power MOSFET.It would provide the designers with the best combination of fast switching, ruggedized device design, low-on-resistance and cost-effectiveness. IRFBF20LPbF ha...
Mfg:IR Pack:04+ D/C:TO-262 Vendor:Other Category:Other
Third generation IRFBF20L from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The IRFBF20L is a surface mount ...
Vendor:Other Category:Other
Power MOSFET IRFBF20, SiHFBF20
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