IRFF220

The IRFF220 is a kind of N-channel enhancement mode silicon date power field effect MOSFET. It is available in the TO-205AF package and is designed for applications suchas switching regulators, switching convertors, motor drivers,relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. Besides,it also can be operated directly from integrated circuits.

There are some features IRFF220 as follows. (1) single pulse avalanche energy rated; (2) SOA is power dissipation limited; (3) nanosecond switching speeds; (4) linear transfer characteristics; (5) high input impedance; (6) related literature.

What comes next is about absolute maximum ratings IRFF220 at TC is 25 . (1): drain to source voltage (VDS) is 200 V; (2): drain to gate voltage (VDGR) is 200 V at RGS is 20 k; (3): continuous drain current (ID) is 3.5 A; (4): pulsed drain current (IDM) is 14 A; (5): maximum power pissipation (PD) is 20 W; (6): single pulse avalanche energy rating (EAS) is 85 mJ; (7): operating and storage temperature are -55 to 150 ; (8): linear derating factor is 0.16 W/. Then is about its electrical specifications when TC is 25 . (1): the minimum drain to source breakdown voltage (BVDSS) is 200 V at VGS is 0 V and ID is 250 A; (2): the typical rise time is 30 ns and the maximum is 60 ns at when VGS is 10 V,RL is 27.4 K for VDSS is 100 V; (3): the typical input capacitance is 450 pF at VGS is 0 V,VDS is 25 V and f is 1.0 MHz; (4): the typical reverse transfer capacitance IRFF220 is 40 pF when VGS is 0 V,VDS is 25 V and f is 1.0 MHz.