Features: · Repetitive Avalanche Ratings· Dynamic dv/dt Rating· Hermetically Sealed· Simple Drive Requirements· Ease of ParallelinSpecifications Parameter Max. Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 3.5 A ID @ VGS = 10V, TC = 100°C Continuous Drai...
IRFF110: Features: · Repetitive Avalanche Ratings· Dynamic dv/dt Rating· Hermetically Sealed· Simple Drive Requirements· Ease of ParallelinSpecifications Parameter Max. Units ID @ VGS = 1...
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Parameter | Max. | Units | |
ID @ VGS = 10V, TC = 25°C | Continuous Drain Current | 3.5 | A |
ID @ VGS = 10V, TC = 100°C | Continuous Drain Current | 2.25 | A |
IDM | Pulsed Drain Current | 14 | A |
PD @TC = 25°C | Power Dissipation | 15 | W |
Linear Derating Factor | 0.12 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 68 | mJ |
IAR | Avalanche Current | A | |
EAR | Repetitive Avalanche Energy | mJ | |
dv/dt | Peak Diode Recovery dv/dt | 5.5 | V/ns |
TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 150 | |
Lead Temperature | 300 (0.063 in. (1.6mm) from case for 10s) | ||
Weight | 0.98(typical) | g |