IRFD320

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Dual Drain
Drain-Source Breakdown Voltage : 400 V
Package / Case : HexDIP-4
Resistance Drain-Source RDS (on) : 1800 mOhms
Continuous Drain Current : 0.49 A


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10 V	0.49	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10 V	0.31
IDM	Pulsed Drain Current	3.9
PD @TC = 25	Power Dissipation	1.0	W
	Linear Derating Factor	0.0083	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	48	mJ
IAR	Avalanche Current	0.49	A
EAR	Repetitive Avalanche Energy	0.10	mJ
dv/dt	Peak Diode Recovery dv/dt	4.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)

Description

  Third Generation HEXFETs IRFD320 from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

  The 4-pin DIP package IRFD320 is a low-cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.